发明授权
- 专利标题： Plasma processing apparatus
- 专利标题（中）： 等离子体处理装置
-
申请号： US12418120申请日： 2009-04-03
-
公开(公告)号： US08623171B2公开(公告)日： 2014-01-07
- 发明人: Ludovic Godet , Timothy J. Miller , Christopher J. Leavitt , Bernard G. Lindsay
- 申请人： Ludovic Godet , Timothy J. Miller , Christopher J. Leavitt , Bernard G. Lindsay
- 申请人地址： US MA Gloucester
- 专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址： US MA Gloucester
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; C23C16/00
摘要：
A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulting modifier is configured to control a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. Controlling the shape of the boundary between the plasma and the plasma sheath enables a large range of incident angles of particles striking the workpiece to be achieved.
公开/授权文献
- US20100255683A1 PLASMA PROCESSING APPARATUS 公开/授权日：2010-10-07