发明授权
US08623229B2 Manufacturing techniques to limit damage on workpiece with varying topographies
有权
制造技术来限制对具有不同形貌的工件的损伤
- 专利标题: Manufacturing techniques to limit damage on workpiece with varying topographies
- 专利标题(中): 制造技术来限制对具有不同形貌的工件的损伤
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申请号: US13306299申请日: 2011-11-29
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公开(公告)号: US08623229B2公开(公告)日: 2014-01-07
- 发明人: Chun-Chang Chen , Shih-Chi Fu , Wang-Pen Mo , Hung Chang Hsieh
- 申请人: Chun-Chang Chen , Shih-Chi Fu , Wang-Pen Mo , Hung Chang Hsieh
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Eschweiler & Associates, LLC
- 主分类号: B44C1/22
- IPC分类号: B44C1/22
摘要:
Some embodiments relate to a method for processing a workpiece. In the method, a first photoresist layer is provided over the workpiece, wherein the first photoresist layer has a first photoresist tone. The first photoresist layer is patterned to provide a first opening exposing a first portion of the workpiece. A second photoresist layer is then provided over the patterned first photoresist layer, wherein the second photoresist layer has a second photoresist tone opposite the first photoresist tone. The second photoresist layer is then patterned to provide a second opening that at least partially overlaps the first opening to define a coincidentally exposed workpiece region. A treatment is then performed on the coincidentally exposed workpiece region. Other embodiments are also disclosed.
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