发明授权
- 专利标题： Contact integration for three-dimensional stacking semiconductor devices
- 专利标题（中）： 触点集成三维堆叠半导体器件
-
申请号： US12969975申请日： 2010-12-16
-
公开(公告)号： US08624300B2公开(公告)日： 2014-01-07
- 发明人: Sanh D. Tang , John Zahurak , Shane Trapp , Krishna K. Parat
- 申请人： Sanh D. Tang , John Zahurak , Shane Trapp , Krishna K. Parat
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Cool Patent, P. C.
- 主分类号： H01L23/52
- IPC分类号： H01L23/52
摘要：
Briefly, in accordance with one or more embodiments, multilayer memory device, comprising a lower deck and an upper deck disposed on the lower deck, the decks comprising one or more memory cells coupled via one or more contacts. An isolation layer is disposed between the upper deck, and one or more contacts are formed between the upper deck and the lower deck to couple one or more of the contact lines of the upper deck with one or more contact lines of the lower deck.