Invention Grant
- Patent Title: Quad flat non-leaded semiconductor package
- Patent Title (中): 四边形非铅半导体封装
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Application No.: US12843440Application Date: 2010-07-26
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Publication No.: US08624368B2Publication Date: 2014-01-07
- Inventor: Fu-Di Tang , Ching-Chiuan Wei , Yung-Chih Lin
- Applicant: Fu-Di Tang , Ching-Chiuan Wei , Yung-Chih Lin
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Edwards Wildman Palmer LLP
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW99107207A 20100312
- Main IPC: H01L23/28
- IPC: H01L23/28

Abstract:
A Quad Flat No-Lead (QFN) semiconductor package includes a die pad; I/O connections disposed at the periphery of the die pad; a chip mounted on the die pad; bonding wires; an encapsulant for encapsulating the die pad, the I/O connections, the chip and the bonding wires while exposing the bottom surfaces of the die pad and the I/O connections; a surface layer formed on the bottoms surfaces of the die pad and the I/O connections; a dielectric layer formed on the bottom surfaces of the encapsulant and the surface layer and having openings for exposing the surface layer. The surface layer has good bonding with the dielectric layer that helps to prevent solder material in a reflow process from permeating into the die pad and prevent solder extrusion on the interface of the I/O connections and the dielectric layer, thereby increasing product yield.
Public/Granted literature
- US20110221049A1 QUAD FLAT NON-LEADED SEMICONDUCTOR PACKAGE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2011-09-15
Information query
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