发明授权
- 专利标题: Semiconductor memory apparatus
- 专利标题(中): 半导体存储装置
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申请号: US11824360申请日: 2007-06-29
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公开(公告)号: US08624643B2公开(公告)日: 2014-01-07
- 发明人: Hoon Choi
- 申请人: Hoon Choi
- 申请人地址: KR
- 专利权人: Hynix Semiconductor Inc.
- 当前专利权人: Hynix Semiconductor Inc.
- 当前专利权人地址: KR
- 代理机构: Blakely, Sokoloff, Taylor & Zafman
- 优先权: KR10-2006-0084103 20060901
- 主分类号: H03L7/06
- IPC分类号: H03L7/06
摘要:
A semiconductor memory apparatus includes a phase comparator configured to compare phases of rising and falling feedback clocks with that of a reference clock, a delay circuit configured to delay the reference clock by a predetermined time based on a comparison result of the phase comparator to thereby generate rising and falling delayed clocks, a clock transmission block configured to invert the rising delayed clock outputted from the delay circuit when the rising and falling feedback clocks have substantially different phases, a duty compensator configured to compensate a duty ratio from outputs of the clock transmitting block to generate a delay locked clock having a compensated duty ratio, and a delay model configured to delay an output and an inverse output of the duty compensator by a modeled delay time respectively to generate the rising and falling feedback clocks.
公开/授权文献
- US20080054947A1 Semiconductor memory apparatus 公开/授权日:2008-03-06
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