发明授权
US08625327B2 Magnetic random access memory and initializing method for the same
有权
磁性随机存取存储器和初始化方法相同
- 专利标题： Magnetic random access memory and initializing method for the same
- 专利标题（中）： 磁性随机存取存储器和初始化方法相同
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申请号： US13054577申请日： 2009-07-02
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公开(公告)号： US08625327B2公开(公告)日： 2014-01-07
- 发明人: Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Norikazu Oshima , Nobuyuki Ishiwata
- 申请人： Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Norikazu Oshima , Nobuyuki Ishiwata
- 申请人地址： JP Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Young & Thompson
- 优先权： JP2008-183703 20080715
- 国际申请： PCT/JP2009/062083 WO 20090702
- 国际公布： WO2010/007893 WO 20100121
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A domain wall motion type MRAM has: a magnetic recording layer 10 being a ferromagnetic layer having perpendicular magnetic anisotropy; a pair of current supply terminals 14a and 14b connected to the magnetic recording layer 10 for supplying a current to the magnetic recording layer 10; and an anti-ferromagnetic layer 45 being in contact with a first region R1 of the magnetic recording layer 10. The first region R1 includes a part of a current supply region RA of the magnetic recording layer 10 that is between the pair of current supply terminals 14a and 14b.
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