A memory device includes magnetic random access memory (“MRAM”) cells that are electrically connected in series, each one of the MRAM cells having a storage magnetization direction and a sense magnetization direction. During a write operation, multiple ones of the MRAM cells are written in parallel by switching the storage magnetization directions of the MRAM cells. During a read operation, a particular one of the MRAM cells is read by varying the sense magnetization direction of the particular one of the MRAM cells, relative to the storage magnetization direction of the particular one of the MRAM cells.