发明授权
US08628684B2 Process for the preparation of a powder comprising one or more derivatives of glycine-N,N diacetic acid and/or one or more derivatives of glutamine-N,N diacetic acid and methylglycine-N,N diacetic acid trisodium salt powder
有权
制备包含甘氨酸-N,N二乙酸和/或谷氨酰胺-N,N-二乙酸和甲基甘氨酸-N,N二乙酸三钠盐粉末的一种或多种衍生物的一种或多种衍生物的粉末的方法
- 专利标题: Process for the preparation of a powder comprising one or more derivatives of glycine-N,N diacetic acid and/or one or more derivatives of glutamine-N,N diacetic acid and methylglycine-N,N diacetic acid trisodium salt powder
- 专利标题(中): 制备包含甘氨酸-N,N二乙酸和/或谷氨酰胺-N,N-二乙酸和甲基甘氨酸-N,N二乙酸三钠盐粉末的一种或多种衍生物的一种或多种衍生物的粉末的方法
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申请号: US13318513申请日: 2010-05-19
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公开(公告)号: US08628684B2公开(公告)日: 2014-01-14
- 发明人: Frank Mrzena , Hans-Juergen Kinder , Michael Schoenherr , Gerhard Cox , Thomas Schmidt , Volker Huett
- 申请人: Frank Mrzena , Hans-Juergen Kinder , Michael Schoenherr , Gerhard Cox , Thomas Schmidt , Volker Huett
- 申请人地址: DE Ludwigshafen
- 专利权人: BASF SE
- 当前专利权人: BASF SE
- 当前专利权人地址: DE Ludwigshafen
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: EP09160718 20090520
- 国际申请: PCT/EP2010/056856 WO 20100519
- 国际公布: WO2010/133618 WO 20101125
- 主分类号: C09K3/00
- IPC分类号: C09K3/00 ; C07C61/08
摘要:
A process is proposed for the preparation of a powder comprising one or more derivatives of glycine-N,N-diacetic acid and/or one or more derivatives of glutamine-N,N-diacetic acid with a degree of crystallinity of ≧30%,starting from an aqueous solution comprising the one or more derivatives of glycine-N,N-diacetic acid and/or the one or more derivatives of glutamine-N,N-diacetic acid in a concentration range from 20 to 60% by weight, based on the total weight of the aqueous solution, where the aqueous solution is concentrated in a first process step in an evaporator with rotating internals, which are arranged at a distance relative to the inside wall of the evaporator of ≦1% of the diameter of the evaporator, to give a crystal slurry with a solids concentration in the range from 60 to 85% by weight, based on the total weight of the crystal slurry, and where in a second process step the crystal slurry is left to ripen in a paste bunker and then in a thin-film contact dryer, and where the residence time in the paste bunker and in the thin-film contact dryer is in total ≧15 minutes.
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