发明授权
US08629426B2 Source/drain stressor having enhanced carrier mobility manufacturing same
有权
具有增强的载流子迁移率制造的源极/漏极应力源相同
- 专利标题： Source/drain stressor having enhanced carrier mobility manufacturing same
- 专利标题（中）： 具有增强的载流子迁移率制造的源极/漏极应力源相同
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申请号： US12960237申请日： 2010-12-03
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公开(公告)号： US08629426B2公开(公告)日： 2014-01-14
- 发明人: Chin-Hsiang Lin , Jeff J. Xu , Pang-Yen Tsai
- 申请人： Chin-Hsiang Lin , Jeff J. Xu , Pang-Yen Tsai
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Various source/drain stressors that can enhance carrier mobility, and methods for manufacturing the same, are disclosed. An exemplary source/drain stressor includes a seed layer of a first material disposed over a substrate of a second material, the first material being different than the second material; a relaxed epitaxial layer disposed over the seed layer; and an epitaxial layer disposed over the relaxed epitaxial layer.
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