发明授权
US08629500B2 Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor
有权
集成电路装置，其包括场效应晶体管，特别是隧道场效应晶体管
- 专利标题： Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor
- 专利标题（中）： 集成电路装置，其包括场效应晶体管，特别是隧道场效应晶体管
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申请号： US11816822申请日： 2005-12-09
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公开(公告)号： US08629500B2公开(公告)日： 2014-01-14
- 发明人: Juergen Holz , Ronald Kakoschke , Thomas Nirschl , Christian Pacha , Klaus Schruefer , Thomas Schulz , Doris Schmitt-Landsiedel
- 申请人： Juergen Holz , Ronald Kakoschke , Thomas Nirschl , Christian Pacha , Klaus Schruefer , Thomas Schulz , Doris Schmitt-Landsiedel
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Slater & Matsil, L.L.P.
- 优先权： DE102005007822 20050221
- 国际申请： PCT/EP2005/056659 WO 20051209
- 国际公布： WO2006/087044 WO 20060824
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
An explanation is given of, inter alia, tunnel field effect transistors having a thicker gate dielectric (GD1) in comparison with other transistors (T2) on the same integrated circuit arrangement (10). As an alternative or in addition, said tunnel field effect transistors have gate regions at mutually remote sides of a channel forming region or an interface between the connection regions (D1, S1) of the tunnel field effect transistor.