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    SEMICONDUCTOR CIRCUIT ARRANGEMENT AND ASSOCIATED METHOD FOR TEMPERATURE DETECTION
    3.
    发明申请
    SEMICONDUCTOR CIRCUIT ARRANGEMENT AND ASSOCIATED METHOD FOR TEMPERATURE DETECTION 审中-公开
    半导体电路布置及相关的温度检测方法

    公开(公告)号：US20110013668A1

    公开(公告)日：2011-01-20

    申请号：US12888528

    申请日：2010-09-23

    申请人： Christian Pacha ,  Thomas Schulz ,  Klaus Von Arnim

    发明人： Christian Pacha ,  Thomas Schulz ,  Klaus Von Arnim

    IPC分类号： G01K7/01 ,  H01L29/74 ,  H01L27/06

    CPC分类号： G01K7/015 ,  H01L27/0727 ,  H01L27/1203 ,  H01L29/78606 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor circuit arrangement and a method for temperature detection is disclosed. One embodiment includes a semiconductor substrate, on which is formed a first insulating layer and thereon a thin active semiconductor region, which is laterally delimited by a second insulating layer. In the active semiconductor region, a first and second doping zone are formed on the surface of the first insulating layer for the definition of a channel zone, wherein there is formed at the surface of the channel zone a gate dielectric and thereon a control electrode for the realization of a field effect transistor. In the active semiconductor region, a diode doping zone is formed on the surface of the first insulating layer, which zone realizes a measuring diode via a diode side area with the first or second doping zone and is delimited by the second insulating layer at its further side areas.

    摘要翻译： 公开了半导体电路装置和温度检测方法。 一个实施例包括半导体衬底，其上形成有由第二绝缘层横向界定的第一绝缘层和其上的薄的有源半导体区域。 在有源半导体区域中，在第一绝缘层的表面上形成第一和第二掺杂区，用于定义沟道区，其中在沟道区的表面形成栅极电介质，并且在其上形成控制电极 实现场效应晶体管。 在有源半导体区域中，在第一绝缘层的表面上形成二极管掺杂区，该区通过具有第一或第二掺杂区的二极管侧区实现测量二极管，并且在其另外的第二绝缘层处限定第二绝缘层 边区。

    Integrated circuit arrangement with capacitor and fabrication method
    4.
    发明授权
    Integrated circuit arrangement with capacitor and fabrication method 有权
    具有电容器的集成电路布置及其制造方法

    公开(公告)号：US07820505B2

    公开(公告)日：2010-10-26

    申请号：US11862640

    申请日：2007-09-27

    申请人： Ralf Brederlow ,  Jessica Hartwich ,  Christian Pacha ,  Wolfgang Rösner ,  Thomas Schulz

    发明人： Ralf Brederlow ,  Jessica Hartwich ,  Christian Pacha ,  Wolfgang Rösner ,  Thomas Schulz

    IPC分类号： H01L21/8242

    CPC分类号： H01L29/785 ,  H01L21/845 ,  H01L27/0629 ,  H01L27/108 ,  H01L27/10805 ,  H01L27/10823 ,  H01L27/10826 ,  H01L27/1085 ,  H01L27/10873 ,  H01L27/10876 ,  H01L27/10879 ,  H01L27/1211 ,  H01L27/13 ,  H01L28/60 ,  H01L29/66795

    摘要： An integrated circuit arrangement contains an insulating region, which is part of a planar insulating layer, and a capacitor which contains: near and far electrode regions near and remote from the insulating region and a dielectric region. The capacitor and an active component are on the same side of the insulating layer, and the near electrode region and an active region of the component are planar and parallel to the insulating layer. The near electrode region is monocrystalline and contains multiple webs. Alternately, a FET is present in which: a channel region is the active region, the FET contains a web with opposing control electrodes connected by a connecting region that is isolated from the channel region by a thick insulating region. The thick insulating region is thicker than control electrode insulation regions. The control electrodes contain the same material as the far electrode region.

    摘要翻译： 集成电路装置包括作为平面绝缘层的一部分的绝缘区域和包含：靠近和远离绝缘区域的近远电极区域和电介质区域的电容器。 电容器和有源部件位于绝缘层的同一侧，并且组件的近电极区域和有源区域是平面的并且平行于绝缘层。 近电极区域是单晶体并且包含多个网状物。 或者，存在FET，其中沟道区域是有源区域，FET包含具有相对的控制电极的幅材，该栅极通过由沟道区域与厚绝缘区域隔离的连接区域连接。 厚的绝缘区域比控制电极绝缘区域厚。 控制电极含有与远电极区域相同的材料。

    INTEGRATED CIRCUIT ARRANGEMENT WITH CAPACITOR AND FABRICATION METHOD
    5.
    发明申请
    INTEGRATED CIRCUIT ARRANGEMENT WITH CAPACITOR AND FABRICATION METHOD 有权
    集成电路与电容器和制造方法的布置

    公开(公告)号：US20080038888A1

    公开(公告)日：2008-02-14

    申请号：US11862640

    申请日：2007-09-27

    申请人： Ralf Brederlow ,  Jessica Hartwich ,  Christian Pacha ,  Wolfgang Rosner ,  Thomas Schulz

    发明人： Ralf Brederlow ,  Jessica Hartwich ,  Christian Pacha ,  Wolfgang Rosner ,  Thomas Schulz

    IPC分类号： H01L21/8242

    CPC分类号： H01L29/785 ,  H01L21/845 ,  H01L27/0629 ,  H01L27/108 ,  H01L27/10805 ,  H01L27/10823 ,  H01L27/10826 ,  H01L27/1085 ,  H01L27/10873 ,  H01L27/10876 ,  H01L27/10879 ,  H01L27/1211 ,  H01L27/13 ,  H01L28/60 ,  H01L29/66795

    摘要： An integrated circuit arrangement contains an insulating region, which is part of a planar insulating layer, and a capacitor which contains: near and far electrode regions near and remote from the insulating region and a dielectric region. The capacitor and an active component are on the same side of the insulating layer, and the near electrode region and an active region of the component are planar and parallel to the insulating layer. The near electrode region is monocrystalline and contains multiple webs. Alternately, a FET is present in which: a channel region is the active region, the FET contains a web with opposing control electrodes connected by a connecting region that is isolated from the channel region by a thick insulating region. The thick insulating region is thicker than control electrode insulation regions. The control electrodes contain the same material as the far electrode region.

    摘要翻译： 集成电路装置包括作为平面绝缘层的一部分的绝缘区域和包含：靠近和远离绝缘区域的近远电极区域和电介质区域的电容器。 电容器和有源部件位于绝缘层的同一侧，并且组件的近电极区域和有源区域是平面的并且平行于绝缘层。 近电极区域是单晶体并且包含多个网状物。 或者，存在FET，其中沟道区域是有源区域，FET包含具有相对的控制电极的幅材，该栅极通过由沟道区域与厚绝缘区域隔离的连接区域连接。 厚的绝缘区域比控制电极绝缘区域厚。 控制电极含有与远电极区域相同的材料。

    Integrated circuit arrangement having capacitors and having planar transistors and fabrication method
    6.
    发明授权
    Integrated circuit arrangement having capacitors and having planar transistors and fabrication method 有权
    具有电容器并具有平面晶体管和制造方法的集成电路装置

    公开(公告)号：US07173302B2

    公开(公告)日：2007-02-06

    申请号：US10531493

    申请日：2003-10-10

    申请人： Ralf Brederlow ,  Jessica Hartwich ,  Christian Pacha ,  Wolfgang Rösner ,  Thomas Schulz

    发明人： Ralf Brederlow ,  Jessica Hartwich ,  Christian Pacha ,  Wolfgang Rösner ,  Thomas Schulz

    IPC分类号： H01L27/108 ,  H01L21/8242

    CPC分类号： H01L27/1085 ,  H01L21/84 ,  H01L27/10805 ,  H01L27/1203

    摘要： An integrated circuit arrangement and method of fabricating the integrated circuit arrangement is described. The integrated circuit arrangement contains an insulating region and a sequence of regions which forms a capacitor. The sequence contains a near electrode region near the insulating region, a dielectric region, and a remote electrode region remote from the insulating region. The insulating region is part of an insulating layer arranged in a plane. The capacitor and an active component are arranged on the same side of the insulating layer and form a memory cell. The near electrode region and an active region of the component are arranged in a plane which lies parallel to the plane in which the insulating layer is arranged. A processor is also contained in the integrated circuit arrangement.

    摘要翻译： 描述了一种集成电路装置及其制造方法。 集成电路装置包含形成电容器的绝缘区域和一系列区域。 该序列包含靠近绝缘区域的近电极区域，电介质区域和远离绝缘区域的远程电极区域。 绝缘区域是布置在平面中的绝缘层的一部分。 电容器和有源部件布置在绝缘层的同一侧上并形成存储单元。 组件的近电极区域和有源区域被布置在与布置绝缘层的平面平行的平面中。 处理器也包含在集成电路装置中。

    Integrated circuit arrangement comprising capacitors and preferably planar transistors, and production method
    9.
    发明申请
    Integrated circuit arrangement comprising capacitors and preferably planar transistors, and production method 有权
    集成电路装置，包括电容器和优选平面晶体管，以及制造方法

    公开(公告)号：US20060022302A1

    公开(公告)日：2006-02-02

    申请号：US10531493

    申请日：2003-10-10

    申请人： Ralf Brederlow ,  Jessica Hartwich ,  Christian Pacha ,  Wolfgang Rosner ,  Thomas Schulz

    发明人： Ralf Brederlow ,  Jessica Hartwich ,  Christian Pacha ,  Wolfgang Rosner ,  Thomas Schulz

    IPC分类号： H01L29/00

    CPC分类号： H01L27/1085 ,  H01L21/84 ,  H01L27/10805 ,  H01L27/1203

    摘要： An integrated circuit arrangement and method of fabricating the integrated circuit arrangement is described. The integrated circuit arrangement contains an insulating region and a sequence of regions which forms a capacitor. The sequence contains a near electrode region near the insulating region, a dielectric region, and a remote electrode region remote from the insulating region. The insulating region is part of an insulating layer arranged in a plane. The capacitor and an active component are arranged on the same side of the insulating layer and form a memory cell. The near electrode region and an active region of the component are arranged in a plane which lies parallel to the plane in which the insulating layer is arranged. A processor is also contained in the integrated circuit arrangement.

    摘要翻译： 描述了一种集成电路装置及其制造方法。 集成电路装置包含形成电容器的绝缘区域和一系列区域。 该序列包含靠近绝缘区域的近电极区域，电介质区域和远离绝缘区域的远程电极区域。 绝缘区域是布置在平面中的绝缘层的一部分。 电容器和有源部件布置在绝缘层的同一侧上并形成存储单元。 组件的近电极区域和有源区域被布置在与布置绝缘层的平面平行的平面中。 处理器也包含在集成电路装置中。

    Integrated circuit arrangement comprising a capacitor, and production method
    10.
    发明申请
    Integrated circuit arrangement comprising a capacitor, and production method 有权
    包括电容器的集成电路装置和制造方法

    公开(公告)号：US20060003526A1

    公开(公告)日：2006-01-05

    申请号：US10529990

    申请日：2003-10-10

    申请人： Ralf Brederlow ,  Jessica Hartwich ,  Christian Pacha ,  Wolfgang Rosner ,  Thomas Schulz

    发明人： Ralf Brederlow ,  Jessica Hartwich ,  Christian Pacha ,  Wolfgang Rosner ,  Thomas Schulz

    IPC分类号： H01L21/8242

    CPC分类号： H01L29/785 ,  H01L21/845 ,  H01L27/0629 ,  H01L27/108 ,  H01L27/10805 ,  H01L27/10823 ,  H01L27/10826 ,  H01L27/1085 ,  H01L27/10873 ,  H01L27/10876 ,  H01L27/10879 ,  H01L27/1211 ,  H01L27/13 ,  H01L28/60 ,  H01L29/66795

    摘要： An integrated circuit arrangement contains an insulating region, which is part of a planar insulating layer, and a capacitor which contains: near and far electrode regions near and remote from the insulating region and a dielectric region. The capacitor and an active component are on the same side of the insulating layer, and the near electrode region and an active region of the component are planar and parallel to the insulating layer. The near electrode region is monocrystalline and contains multiple webs. Alternately, a FET is present in which: a channel region is the active region, the FET contains a web with opposing control electrodes connected by a connecting region that is isolated from the channel region by a thick insulating region. The thick insulating region is thicker than control electrode insulation regions. The control electrodes contain the same material as the far electrode region.

    摘要翻译： 集成电路装置包括作为平面绝缘层的一部分的绝缘区域和包含：靠近和远离绝缘区域的近远电极区域和电介质区域的电容器。 电容器和有源部件位于绝缘层的同一侧，并且组件的近电极区域和有源区域是平面的并且平行于绝缘层。 近电极区域是单晶体并且包含多个网状物。 或者，存在FET，其中沟道区域是有源区域，FET包含具有相对的控制电极的幅材，该栅极通过由沟道区域与厚绝缘区域隔离的连接区域连接。 厚的绝缘区域比控制电极绝缘区域厚。 控制电极含有与远电极区域相同的材料。