Invention Grant
- Patent Title: Methodology of optical proximity correction optimization
- Patent Title (中): 光学邻近校正优化方法
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Application No.: US13448977Application Date: 2012-04-17
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Publication No.: US08631360B2Publication Date: 2014-01-14
- Inventor: Hung-Chun Wang , Ming-Hui Chih , Yu-Po Tang , Chia-Ping Chiang , Feng-Ju Chang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
- Applicant: Hung-Chun Wang , Ming-Hui Chih , Yu-Po Tang , Chia-Ping Chiang , Feng-Ju Chang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method for performing OPC and evaluating OPC solutions is disclosed. An exemplary method includes receiving a design database corresponding to an IC circuit mask. A first lithography simulation and evaluation is performed on the design database utilizing a first set of performance indexes. A modification is made to the design database based on a result of performing the first lithography simulation and evaluation. A second lithography simulation and evaluation is performed on the design database utilizing a second set of performance indexes to verify the modification. If necessary, the design database is modified again based on a result of the second lithography simulation and evaluation. The modified design database is provided to a mask manufacturer for manufacturing the mask corresponding to the modified design database.
Public/Granted literature
- US20130275926A1 NOVEL METHODOLOGY OF OPTICAL PROXIMITY CORRECTION OPTIMIZATION Public/Granted day:2013-10-17
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