发明授权
- 专利标题: Integrated circuit design using DFM-enhanced architecture
- 专利标题(中): 采用DFM增强架构的集成电路设计
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申请号: US12708242申请日: 2010-02-18
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公开(公告)号: US08631366B2公开(公告)日: 2014-01-14
- 发明人: Yung-Chin Hou , Lee-Chung Lu , Li-Chun Tien , Yi-Kan Cheng , Chun-Hui Tai , Ta-Pen Guo , Yuan-Te Hou
- 申请人: Yung-Chin Hou , Lee-Chung Lu , Li-Chun Tien , Yi-Kan Cheng , Chun-Hui Tai , Ta-Pen Guo , Yuan-Te Hou
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
Integrated circuit libraries include a first standard cell having a first left boundary and a first right boundary, and a second standard cell having a second left boundary and a second right boundary. The first standard cell and the second standard cell are of a same cell variant. A first active region in the first standard cell has a different length of diffusion than a second active region in the second standard cell. The first active region and the second active region are corresponding active regions represented by a same component of a same circuit diagram representing both the first standard cell and the second standard cell.
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