Invention Grant
- Patent Title: Compositions for use in semiconductor devices
- Patent Title (中): 用于半导体器件的组合物
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Application No.: US12146113Application Date: 2008-06-25
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Publication No.: US08632692B2Publication Date: 2014-01-21
- Inventor: Donald L. Yates
- Applicant: Donald L. Yates
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: C09K13/00
- IPC: C09K13/00

Abstract:
An improved composition and method for cleaning a surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of the wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying a fluorine ion component, and the amounts of the fluorine ion component and an acid component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove the photoresist layer, leaving the underlying low-k dielectric layer essentially intact.
Public/Granted literature
- US20090001314A1 Compositions for Dissolution of Low-K Dielectric Films, and Methods of Use Public/Granted day:2009-01-01
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