Invention Grant
- Patent Title: Methods and apparatus for controlling substrate temperature in a process chamber
- Patent Title (中): 用于控制处理室中的衬底温度的方法和装置
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Application No.: US13097822Application Date: 2011-04-29
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Publication No.: US08633423B2Publication Date: 2014-01-21
- Inventor: Xing Lin , Douglas A. Buchberger, Jr. , Xiaoping Zhou , Valentin Todorow , Andrew Nguyen , Anchel Sheyner
- Applicant: Xing Lin , Douglas A. Buchberger, Jr. , Xiaoping Zhou , Valentin Todorow , Andrew Nguyen , Anchel Sheyner
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H05B1/00
- IPC: H05B1/00 ; H01L21/683
Abstract:
Methods and apparatus for controlling the temperature of a substrate during processing are provided herein. In some embodiments, an apparatus for retaining and controlling substrate temperature may include a puck of dielectric material; an electrode disposed in the puck proximate a surface of the puck upon which a substrate is to be retained; and a plurality of heater elements disposed in the puck and arranged in concentric rings to provide independent temperature control zones.
Public/Granted literature
- US20120091108A1 METHODS AND APPARATUS FOR CONTROLLING SUBSTRATE TEMPERATURE IN A PROCESS CHAMBER Public/Granted day:2012-04-19
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