发明授权
- 专利标题： Silicon controlled rectifier based electrostatic discharge protection circuit with integrated JFETs, method of operation and design structure
- 专利标题（中）： 基于集成JFET的可控硅整流器静电放电保护电路，工作方式和设计结构
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申请号： US12782296申请日： 2010-05-18
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公开(公告)号： US08634172B2公开(公告)日： 2014-01-21
- 发明人: John B. Campi, Jr. , Shunhua T. Chang , Kiran V. Chatty , Robert J. Gauthier, Jr. , Mujahid Muhammad
- 申请人： John B. Campi, Jr. , Shunhua T. Chang , Kiran V. Chatty , Robert J. Gauthier, Jr. , Mujahid Muhammad
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Anthony Canale
- 主分类号： H02H9/00
- IPC分类号： H02H9/00
摘要：
An enhanced turn-on time SCR based electrostatic discharge (ESD) protection circuit includes an integrated JFET, method of use and design structure. The enhanced turn-on time silicon controlled rectifier (SCR) based electrostatic discharge (ESD) protection circuit includes an integrated JFET in series with an NPN base.