发明授权
US08634224B2 Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell
有权
存储单元，非易失性存储器阵列，操作存储器单元的方法，写入存储器单元和从存储器单元读取的方法，以及编程存储器单元的方法
- 专利标题： Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell
- 专利标题（中）： 存储单元，非易失性存储器阵列，操作存储器单元的方法，写入存储器单元和从存储器单元读取的方法，以及编程存储器单元的方法
-
申请号： US12855624申请日： 2010-08-12
-
公开(公告)号： US08634224B2公开(公告)日： 2014-01-21
- 发明人: Bhaskar Srinivasan , Gurtej S. Sandhu
- 申请人： Bhaskar Srinivasan , Gurtej S. Sandhu
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John, P.S.
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
In one aspect, a method of operating a memory cell includes using different electrodes to change a programmed state of the memory cell than are used to read the programmed state of the memory cell. In one aspect, a memory cell includes first and second opposing electrodes having material received there-between. The material has first and second lateral regions of different composition relative one another. One of the first and second lateral regions is received along one of two laterally opposing edges of the material. Another of the first and second lateral regions is received along the other of said two laterally opposing edges of the material. At least one of the first and second lateral regions is capable of being repeatedly programmed to at least two different resistance states. Other aspects and implementations are disclosed.
公开/授权文献
信息查询
