发明授权
US08637229B2 Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
有权
图案形成方法，图案形成方法中使用的多次显影用抗蚀剂组合物，图案形成方法中使用的负显影用显影剂和图案形成方法中使用的负显影用冲洗液
- 专利标题： Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
- 专利标题（中）： 图案形成方法，图案形成方法中使用的多次显影用抗蚀剂组合物，图案形成方法中使用的负显影用显影剂和图案形成方法中使用的负显影用冲洗液
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申请号： US12871969申请日： 2010-08-31
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公开(公告)号： US08637229B2公开(公告)日： 2014-01-28
- 发明人: Hideaki Tsubaki , Shinichi Kanna
- 申请人： Hideaki Tsubaki , Shinichi Kanna
- 申请人地址： JP Tokyo
- 专利权人： FUJIFILM Corporation
- 当前专利权人： FUJIFILM Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2006-347560 20061225; JP2007-103901 20070411; JP2007-117158 20070426; JP2007-325915 20071218
- 主分类号： G03F7/039
- IPC分类号： G03F7/039 ; G03F7/30 ; G03F7/32
摘要：
A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.
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