发明授权
US08637761B2 Solar cells fabricated by using CVD epitaxial Si films on metallurgical-grade Si wafers
有权
通过在冶金级Si晶片上使用CVD外延Si膜制造的太阳能电池
- 专利标题： Solar cells fabricated by using CVD epitaxial Si films on metallurgical-grade Si wafers
- 专利标题（中）： 通过在冶金级Si晶片上使用CVD外延Si膜制造的太阳能电池
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申请号： US12343116申请日： 2008-12-23
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公开(公告)号： US08637761B2公开(公告)日： 2014-01-28
- 发明人: Jianming Fu , Zheng Xu , Peijun Ding , Chentao Yu , Guanghua Song , Jianjun Liang
- 申请人： Jianming Fu , Zheng Xu , Peijun Ding , Chentao Yu , Guanghua Song , Jianjun Liang
- 申请人地址： US CA Fremont
- 专利权人： Silevo, Inc.
- 当前专利权人： Silevo, Inc.
- 当前专利权人地址： US CA Fremont
- 代理机构： Park, Vaughan, Fleming & Dowler LLP
- 代理商 Shun Yao
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; C30B15/00
摘要：
One embodiment of the present invention provides a method for fabricating a solar cell. The method includes: melting a metallurgical-grade (MG) Si feedstock, lowering a single-crystalline Si seed to touch the surface of the molten MG-Si, slowly pulling out a single-crystal Si ingot of the molten MG-Si, processing the Si ingot into single crystal Si wafers to form MG-Si substrates for subsequent epitaxial growth, leaching out residual metal impurities in the MG-Si substrate, epitaxially growing a layer of single-crystal Si thin film doped with boron on the MG-Si substrate, doping phosphor to the single-crystal Si thin film to form an emitter layer, depositing an anti-reflection layer on top of the single-crystal Si thin film, and forming the front and the back electrical contacts.
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