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1.发明申请SOLAR CELLS FABRICATED BY USING CVD EPITAXIAL SI FILMS ON METALLURGICAL-GRADE SI WAFERS 有权通过使用CVD外延膜在冶金级SI WAFERS上制造的太阳能电池公开(公告)号：US20100065111A1
公开(公告)日：2010-03-18
申请号：US12343116
申请日：2008-12-23
申请人： Jianming Fu , Zheng Xu , Peijun Ding , Chentao Yu , Guanghua Song , Jianjun Liang
发明人： Jianming Fu , Zheng Xu , Peijun Ding , Chentao Yu , Guanghua Song , Jianjun Liang
IPC分类号： H01L31/0288
CPC分类号： H01L31/1804 , H01L21/3221 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： One embodiment of the present invention provides a method for fabricating a solar cell. The method includes: melting a metallurgical-grade (MG) Si feedstock, lowering a single-crystalline Si seed to touch the surface of the molten MG-Si, slowly pulling out a single-crystal Si ingot of the molten MG-Si, processing the Si ingot into single crystal Si wafers to form MG-Si substrates for subsequent epitaxial growth, leaching out residual metal impurities in the MG-Si substrate, epitaxially growing a layer of single-crystal Si thin film doped with boron on the MG-Si substrate, doping phosphor to the single-crystal Si thin film to form an emitter layer, depositing an anti-reflection layer on top of the single-crystal Si thin film, and forming the front and the back electrical contacts.
摘要翻译： 本发明的一个实施例提供一种制造太阳能电池的方法。 该方法包括：熔化冶金级（MG）Si原料，降低单晶Si种子以接触熔融的MG-Si的表面，缓慢拉出熔融的MG-Si的单晶Si锭，加工 Si晶锭形成单晶Si晶片以形成用于随后的外延生长的MG-Si衬底，浸出MG-Si衬底中的残余金属杂质，在MG-Si上外延生长掺杂有硼的单晶Si薄膜层 衬底，掺杂磷光体到单晶Si薄膜以形成发射极层，在单晶Si薄膜的顶部沉积抗反射层，并形成前后电接触。
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2.发明授权Solar cells fabricated by using CVD epitaxial Si films on metallurgical-grade Si wafers 有权通过在冶金级Si晶片上使用CVD外延Si膜制造的太阳能电池公开(公告)号：US08637761B2
公开(公告)日：2014-01-28
申请号：US12343116
申请日：2008-12-23
申请人： Jianming Fu , Zheng Xu , Peijun Ding , Chentao Yu , Guanghua Song , Jianjun Liang
发明人： Jianming Fu , Zheng Xu , Peijun Ding , Chentao Yu , Guanghua Song , Jianjun Liang
CPC分类号： H01L31/1804 , H01L21/3221 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： One embodiment of the present invention provides a method for fabricating a solar cell. The method includes: melting a metallurgical-grade (MG) Si feedstock, lowering a single-crystalline Si seed to touch the surface of the molten MG-Si, slowly pulling out a single-crystal Si ingot of the molten MG-Si, processing the Si ingot into single crystal Si wafers to form MG-Si substrates for subsequent epitaxial growth, leaching out residual metal impurities in the MG-Si substrate, epitaxially growing a layer of single-crystal Si thin film doped with boron on the MG-Si substrate, doping phosphor to the single-crystal Si thin film to form an emitter layer, depositing an anti-reflection layer on top of the single-crystal Si thin film, and forming the front and the back electrical contacts.
摘要翻译： 本发明的一个实施例提供一种制造太阳能电池的方法。 该方法包括：熔化冶金级（MG）Si原料，降低单晶Si种子以接触熔融的MG-Si的表面，缓慢拉出熔融的MG-Si的单晶Si锭，加工 Si晶锭形成单晶Si晶片以形成用于随后的外延生长的MG-Si衬底，浸出MG-Si衬底中的残余金属杂质，在MG-Si上外延生长掺杂有硼的单晶Si薄膜层 衬底，掺杂磷光体到单晶Si薄膜以形成发射极层，在单晶Si薄膜的顶部沉积抗反射层，并形成前后电接触。
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3.发明授权Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design 有权异质结太阳能电池基于外延晶体硅薄膜在冶金硅基板上的设计公开(公告)号：US08283557B2
公开(公告)日：2012-10-09
申请号：US12401314
申请日：2009-03-10
申请人： Chentao Yu , Jiunn Benjamin Heng , Zheng Xu , Jianming Fu , Jianjun Liang
发明人： Chentao Yu , Jiunn Benjamin Heng , Zheng Xu , Jianming Fu , Jianjun Liang
IPC分类号： H01L31/00
CPC分类号： H01L31/0747 , H01L31/02363 , H01L31/18 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.
摘要翻译： 本发明的一个实施例提供了异质结太阳能电池。 太阳能电池包括冶金级Si（MG-Si）衬底，位于MG-Si衬底上方的重掺杂晶体层Si，位于重掺杂晶体Si层上方的轻掺杂晶体层Si， 位于MG-Si衬底背面的背面欧姆接触层，位于重掺杂晶体Si层上方的钝化层，位于钝化层上方的重掺杂非晶Si层（a-Si）层， 位于重掺杂的a-Si层上方的透明导电氧化物（TCO）和位于TCO层上方的前欧姆接触电极。
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4.发明申请HETEROJUNCTION SOLAR CELL BASED ON EPITAXIAL CRYSTALLINE-SILICON THIN FILM ON METALLURGICAL SILICON SUBSTRATE DESIGN 有权基于金属硅基底板上的外延晶体硅薄膜的异相太阳能电池公开(公告)号：US20100229927A1
公开(公告)日：2010-09-16
申请号：US12401314
申请日：2009-03-10
申请人： Chentao Yu , Jiunn Benjamin Heng , Zheng Xu , Jianming Fu , Jianjun Liang
发明人： Chentao Yu , Jiunn Benjamin Heng , Zheng Xu , Jianming Fu , Jianjun Liang
IPC分类号： H01L31/00 , H01L31/0216
CPC分类号： H01L31/0747 , H01L31/02363 , H01L31/18 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.
摘要翻译： 本发明的一个实施例提供了异质结太阳能电池。 太阳能电池包括冶金级Si（MG-Si）衬底，位于MG-Si衬底上方的重掺杂晶体层Si，位于重掺杂晶体Si层上方的轻掺杂晶体层Si， 位于MG-Si衬底背面的背面欧姆接触层，位于重掺杂晶体Si层上方的钝化层，位于钝化层上方的重掺杂非晶Si层（a-Si）层， 位于重掺杂的a-Si层上方的透明导电氧化物（TCO）和位于TCO层上方的前欧姆接触电极。
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