发明授权
- 专利标题： Semiconductor devices and methods of forming the same
- 专利标题（中）： 半导体器件及其形成方法
-
申请号： US13267267申请日： 2011-10-06
-
公开(公告)号： US08637927B2公开(公告)日： 2014-01-28
- 发明人: Heedon Hwang , Ji-Young Min , Jongchul Park , Insang Jeon , Woogwan Shim
- 申请人： Heedon Hwang , Ji-Young Min , Jongchul Park , Insang Jeon , Woogwan Shim
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec PA
- 优先权： KR10-2010-0097388 20101006
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include a trench in a substrate. The semiconductor devices may also include a bulk electrode within opposing sidewalls of the trench. The semiconductor devices may further include a liner electrode between the bulk electrode and the opposing sidewalls of the trench. The liner electrode may include a sidewall portion between a sidewall of the bulk electrode and one of the opposing sidewalls of the trench.
公开/授权文献
- US20120086074A1 Semiconductor Devices And Methods of Forming The Same 公开/授权日：2012-04-12
信息查询
IPC分类:
