发明授权
- 专利标题： Semiconductor device with pocket regions and method of manufacturing the same
- 专利标题（中）： 具有口袋区域的半导体器件及其制造方法
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申请号： US12958555申请日： 2010-12-02
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公开(公告)号： US08637938B2公开(公告)日： 2014-01-28
- 发明人: Akihiro Usujima
- 申请人： Akihiro Usujima
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2009-297363 20091228
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; H01L21/336
摘要：
A semiconductor device includes a first pocket region and a second pocket region. The source region includes a first extension region having a concentration peak located at a first depth from a surface of the semiconductor substrate, and the first pocket region has a concentration peak located deeper than the first depth, and the drain region includes a second extension region having a concentration peak located at a second depth from the surface of the semiconductor substrate, and the second pocket region has a concentration peak located shallower than the second depth.
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