Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing the same
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US13379658Application Date: 2011-02-27
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Publication No.: US08642471B2Publication Date: 2014-02-04
- Inventor: Haizhou Yin , Jun Luo , Huilong Zhu , Zhijiong Luo
- Applicant: Haizhou Yin , Jun Luo , Huilong Zhu , Zhijiong Luo
- Applicant Address: CN Beijing
- Assignee: The institute of Microelectronics, Chinese Academy of Science
- Current Assignee: The institute of Microelectronics, Chinese Academy of Science
- Current Assignee Address: CN Beijing
- Agency: Treasure IP Group
- Priority: CN201010572608 20101203
- International Application: PCT/CN2011/071350 WO 20110227
- International Announcement: WO2012/071813 WO 20120607
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/94
Abstract:
The present invention provides a method for manufacturing a semiconductor structure. The method can effectively reduce the contact resistance between source/drain regions and a contact layer by forming two contact layers of different thickness on the surfaces of the source/drain regions. Further, the present invention provides a semiconductor structure, which has reduced the contact resistance.
Public/Granted literature
- US20120205728A1 Semiconductor Structure and Method for Manufacturing the Same Public/Granted day:2012-08-16
Information query
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