发明授权
- 专利标题： Terminal structure, electronic device, and manufacturing method thereof
- 专利标题（中）： 端子结构，电子器件及其制造方法
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申请号： US12908518申请日： 2010-10-20
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公开(公告)号： US08642899B2公开(公告)日： 2014-02-04
- 发明人: Toshiji Hamatani , Tomoyuki Aoki , Hiroki Adachi , Hiroyuki Yajima
- 申请人： Toshiji Hamatani , Tomoyuki Aoki , Hiroki Adachi , Hiroyuki Yajima
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权： JP2009-241992 20091021
- 主分类号： H05K1/11
- IPC分类号： H05K1/11 ; H05K3/10
摘要：
A method for manufacturing an electronic device comprising a terminal provided with a conductor which penetrates a cured prepreg is provided. At least one opening is formed in the prepreg. The prepreg is attached to a substrate over which an electronic element is formed so that the conductor included in the terminal overlaps with the opening. A conductive paste is provided in a region of the prepreg where the opening is provided. Part of the conductive paste flows into the opening to be in contact with the conductor included in the terminal. Then, heat treatment is performed so that the conductive paste and the prepreg are cured. In the process for manufacturing the terminal, it is not necessary to perform a step of forming an opening with a laser beam after the prepreg is cured. Thus, an adverse effect of a laser beam on the electronic element can be eliminated.
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