发明授权
US08642943B2 Semiconductor wafer, light-receiving element, light-receiving element array, hybrid-type detection device, optical sensor device, and process for production of semiconductor wafer
有权
半导体晶片，受光元件，受光元件阵列，混合型检测装置，光学传感器装置以及半导体晶片的制造方法
- 专利标题： Semiconductor wafer, light-receiving element, light-receiving element array, hybrid-type detection device, optical sensor device, and process for production of semiconductor wafer
- 专利标题（中）： 半导体晶片，受光元件，受光元件阵列，混合型检测装置，光学传感器装置以及半导体晶片的制造方法
-
申请号： US13640922申请日： 2010-12-03
-
公开(公告)号： US08642943B2公开(公告)日： 2014-02-04
- 发明人: Hiroki Mori , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Kouhei Miura , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
- 申请人： Hiroki Mori , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Kouhei Miura , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
- 申请人地址： JP Osaka-Shi
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JP Osaka-Shi
- 代理机构： Venable LLP
- 代理商 Michael A. Sartori
- 优先权： JP2010-092523 20100413
- 国际申请： PCT/JP2010/071649 WO 20101203
- 国际公布： WO2011/129031 WO 20111020
- 主分类号： H01L31/101
- IPC分类号： H01L31/101 ; H01L31/18 ; H01L33/06
摘要：
A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38≦x≦0.68) layer and a GaAs1-ySby (0.25≦y≦0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.