发明授权
- 专利标题： Integrated circuit having microelectromechanical system device and method of fabricating the same
- 专利标题（中）： 具有微机电系统装置的集成电路及其制造方法
-
申请号： US12565154申请日： 2009-09-23
-
公开(公告)号： US08642986B2公开(公告)日： 2014-02-04
- 发明人: Tzung-Han Tan , Bang-Chiang Lan , Ming-I Wang , Tzung-I Su , Chien-Hsin Huang , Hui-Min Wu , Chao-An Su , Min Chen , Meng-Jia Lin
- 申请人： Tzung-Han Tan , Bang-Chiang Lan , Ming-I Wang , Tzung-I Su , Chien-Hsin Huang , Hui-Min Wu , Chao-An Su , Min Chen , Meng-Jia Lin
- 申请人地址： TW Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsinchu
- 代理商 Ding Yu Tan
- 主分类号： H01L29/84
- IPC分类号： H01L29/84 ; H01L21/30
摘要：
An integrated circuit (IC) having a microelectromechanical system (MEMS) device buried therein is provided. The integrated circuit includes a substrate, a metal-oxide semiconductor (MOS) device, a metal interconnect, and the MEMS device. The substrate has a logic circuit region and a MEMS region. The MOS device is located on the logic circuit region of the substrate. The metal interconnect, formed by a plurality of levels of wires and a plurality of vias, is located above the substrate to connect the MOS device. The MEMS device is located on the MEMS region, and includes a sandwich membrane located between any two neighboring levels of wires in the metal interconnect and connected to the metal interconnect.