发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US13462427申请日: 2012-05-02
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公开(公告)号: US08643074B2公开(公告)日: 2014-02-04
- 发明人: Chih-Yang Pai , Kuo-Chi Tu , Wen-Chuan Chiang , Chung-Yen Chou
- 申请人: Chih-Yang Pai , Kuo-Chi Tu , Wen-Chuan Chiang , Chung-Yen Chou
- 申请人地址: TW
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW
- 代理机构: Lowe Hauptman & Ham, LLP
- 主分类号: H01L27/108
- IPC分类号: H01L27/108
摘要:
A semiconductor device includes a semiconductor substrate, an isolation structure disposed in the semiconductor substrate, a conductive layer disposed over the isolation structure, a capacitor disposed over the isolation structure, the capacitor including a top electrode, a bottom electrode, and a dielectric disposed between the top electrode and the bottom electrode, and a first contact electrically coupling the conductive layer and the bottom electrode, the bottom electrode substantially engaging the first contact on at least two faces.
公开/授权文献
- US20130292794A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING 公开/授权日:2013-11-07