发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US13414651申请日: 2012-03-07
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公开(公告)号: US08643145B2公开(公告)日: 2014-02-04
- 发明人: Yukio Takahashi
- 申请人: Yukio Takahashi
- 申请人地址: JP Kawasaki-shi, Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi, Kanagawa
- 代理机构: McGinn IP Law Group, PLLC
- 优先权: JP2011-052029 20110309
- 主分类号: H01L29/00
- IPC分类号: H01L29/00 ; H01L21/02
摘要:
A semiconductor device including a substrate, an insulation film being embedded into the substrate and having multiple openings, multiple dummy diffusion layers formed in the substrate and located in the openings, multiple resistance elements being formed over the insulation film so as not to overlap the dummy diffusion layers in a plan view in a resistance element forming region and extending in a first direction, and multiple dummy resistance elements being formed over the insulation film and the dummy diffusion layers and extending in the first direction in the resistance element forming region, in which each of the dummy resistance elements overlaps at least two dummy diffusion layers aligning in a second direction perpendicular to the first direction in a plane horizontal to the substrate in a plan view.
公开/授权文献
- US20120228740A1 SEMICONDUCTOR DEVICE 公开/授权日:2012-09-13