发明授权
- 专利标题： Double trench rectifier
- 专利标题（中）： 双沟槽整流器
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申请号： US13406071申请日： 2012-02-27
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公开(公告)号： US08643152B2公开(公告)日： 2014-02-04
- 发明人: Hung-Ping Tsai , Shih-Kuan Chen , Lung-Ching Kao
- 申请人： Hung-Ping Tsai , Shih-Kuan Chen , Lung-Ching Kao
- 申请人地址： US NE Columbus
- 专利权人： Vishay General Semiconductor, LLC
- 当前专利权人： Vishay General Semiconductor, LLC
- 当前专利权人地址： US NE Columbus
- 代理机构： Volpe and Koenig, P.C.
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
A high power density or low forward voltage rectifier which utilizes at least one trench in both the anode and cathode. The trenches are formed in opposing surfaces of the substrate, to increase the junction surface area per unit surface area of the semiconductor die. This structure allows for increased current loads without increased horizontal die space. The increased current handling capability allows for the rectifier to operate at lower forward voltages. Furthermore, the present structure provides for increased substrate usage by up to 30 percent.
公开/授权文献
- US20120223421A1 DOUBLE TRENCH RECTIFIER 公开/授权日：2012-09-06
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