发明授权
- 专利标题： Multi-level memory device using resistance material
- 专利标题（中）： 使用电阻材料的多级存储器件
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申请号： US12819498申请日： 2010-06-21
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公开(公告)号： US08644062B2公开(公告)日： 2014-02-04
- 发明人: Ik-Soo Kim , Sung-Lae Cho , Do-Hyung Kim , Hyeong-Geun An , Dong-Hyun Im , Eun-Hee Cho
- 申请人： Ik-Soo Kim , Sung-Lae Cho , Do-Hyung Kim , Hyeong-Geun An , Dong-Hyun Im , Eun-Hee Cho
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 优先权： KR10-2009-0073351 20090810
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A multi-level memory device includes an insulating layer having an opening therein, and a multi-level cell (MLC) formed in the opening that has a resistance level varies based on the data stored therein. The MLC is configured to have a resistance level that varies as write pulses having the same pulse height and different pulse widths are applied to the MLC.
公开/授权文献
- US20110032752A1 Multi-Level Memory Device Using Resistance Material 公开/授权日：2011-02-10
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