发明授权
US08647945B2 Method of forming substrate contact for semiconductor on insulator (SOI) substrate
有权
半导体绝缘体(SOI)衬底的衬底接触形成方法
- 专利标题: Method of forming substrate contact for semiconductor on insulator (SOI) substrate
- 专利标题(中): 半导体绝缘体(SOI)衬底的衬底接触形成方法
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申请号: US12959824申请日: 2010-12-03
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公开(公告)号: US08647945B2公开(公告)日: 2014-02-11
- 发明人: Geng Wang , Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi
- 申请人: Geng Wang , Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号: H01L21/70
- IPC分类号: H01L21/70
摘要:
A semiconductor structure is provided that includes a material stack including an epitaxially grown semiconductor layer on a base semiconductor layer, a dielectric layer on the epitaxially grown semiconductor layer, and an upper semiconductor layer present on the dielectric layer. A capacitor is present extending from the upper semiconductor layer through the dielectric layer into contact with the epitaxially grown semiconductor layer. The capacitor includes a node dielectric present on the sidewalls of the trench and an upper electrode filling at least a portion of the trench. A substrate contact is present in a contact trench extending from the upper semiconductor layer through the dielectric layer and the epitaxially semiconductor layer to a doped region of the base semiconductor layer. A substrate contact is also provided that contacts the base semiconductor layer through the sidewall of a trench. Methods for forming the above-described structures are also provided.
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