Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13345046Application Date: 2012-01-06
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Publication No.: US08647984B2Publication Date: 2014-02-11
- Inventor: Yuichi Nakao , Satoshi Kageyama
- Applicant: Yuichi Nakao , Satoshi Kageyama
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2008-202138 20080805; JP2008-214626 20080822; JP2008-236649 20080916; JP2008-245864 20080925
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
The method of manufacturing a semiconductor device according to the present invention includes: an insulating layer forming step of forming an insulating layer made of an insulating material containing Si and O; a groove forming step of forming a groove in the insulating layer; a metal film applying step of covering the inner surface of the groove with a metal film made of MnOx (x: a number greater than zero) by sputtering; and a wire forming step of forming a Cu wire made of a metallic material mainly composed of Cu on the metal film.
Public/Granted literature
- US20120108059A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2012-05-03
Information query
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