Invention Grant
- Patent Title: Silicon drift X-ray detector
- Patent Title (中): 硅漂移X射线探测器
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Application No.: US12646496Application Date: 2009-12-23
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Publication No.: US08648313B2Publication Date: 2014-02-11
- Inventor: Toshiyoshi Watanabe , Kouji Miyatake
- Applicant: Toshiyoshi Watanabe , Kouji Miyatake
- Applicant Address: JP Tokyo
- Assignee: JEOL Ltd.
- Current Assignee: JEOL Ltd.
- Current Assignee Address: JP Tokyo
- Agency: The Webb Law Firm
- Priority: JP2008-330339 20081225
- Main IPC: G01T1/24
- IPC: G01T1/24

Abstract:
A silicon drift detector has an X-ray detection device, an electrode terminal subassembly for electrical connection, a Peltier device, and first and second shields formed between the electrode terminal subassembly and the Peltier device. The first shield is made of a material consisting chiefly of an element having an atomic number smaller than the average atomic numbers of the elements included in the material of the Peltier device. The second shield is made of a material consisting chiefly of an element having an atomic number greater than the atomic numbers of the elements included in the material of the Peltier device.
Public/Granted literature
- US20100163742A1 Silicon Drift X-Ray Detector Public/Granted day:2010-07-01
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