Silicon drift X-ray detector
    1.
    发明授权
    Silicon drift X-ray detector 有权
    硅漂移X射线探测器

    公开(公告)号:US08648313B2

    公开(公告)日:2014-02-11

    申请号:US12646496

    申请日:2009-12-23

    IPC分类号: G01T1/24

    摘要: A silicon drift detector has an X-ray detection device, an electrode terminal subassembly for electrical connection, a Peltier device, and first and second shields formed between the electrode terminal subassembly and the Peltier device. The first shield is made of a material consisting chiefly of an element having an atomic number smaller than the average atomic numbers of the elements included in the material of the Peltier device. The second shield is made of a material consisting chiefly of an element having an atomic number greater than the atomic numbers of the elements included in the material of the Peltier device.

    摘要翻译: 硅漂移检测器具有X射线检测装置,用于电连接的电极端子子组件,珀耳帖装置以及形成在电极端子组件和珀耳帖装置之间的第一和第二屏蔽。 第一屏蔽由主要由原子序数小于包含在珀耳帖装置的材料中的元素的平均原子序数的元素组成的材料制成。 第二屏蔽由主要由原子序数大于包含在珀耳帖装置的材料中的元素的原子序数的元素组成的材料制成。

    Silicon Drift X-Ray Detector
    2.
    发明申请
    Silicon Drift X-Ray Detector 有权
    硅漂移X射线探测器

    公开(公告)号:US20100163742A1

    公开(公告)日:2010-07-01

    申请号:US12646496

    申请日:2009-12-23

    IPC分类号: G01T1/24 G01T1/36

    摘要: A silicon drift detector has an X-ray detection device, an electrode terminal subassembly for electrical connection, a Peltier device, and first and second shields formed between the electrode terminal subassembly and the Peltier device. The first shield is made of a material consisting chiefly of an element having an atomic number smaller than the average atomic numbers of the elements included in the material of the Peltier device. The second shield is made of a material consisting chiefly of an element having an atomic number greater than the atomic numbers of the elements included in the material of the Peltier device

    摘要翻译: 硅漂移检测器具有X射线检测装置,用于电连接的电极端子子组件,珀耳帖装置以及形成在电极端子组件和珀耳帖装置之间的第一和第二屏蔽。 第一屏蔽由主要由原子序数小于包含在珀耳帖装置的材料中的元素的平均原子序数的元素组成的材料制成。 第二屏蔽由主要由原子序数大于珀耳帖装置的材料中的元素的原子序数的元素组成的材料制成