Invention Grant
US08648413B2 Super-junction trench MOSFET with multiple trenched source-body contacts
有权
具有多个沟槽源体接触的超结沟槽MOSFET
- Patent Title: Super-junction trench MOSFET with multiple trenched source-body contacts
- Patent Title (中): 具有多个沟槽源体接触的超结沟槽MOSFET
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Application No.: US13433664Application Date: 2012-03-29
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Publication No.: US08648413B2Publication Date: 2014-02-11
- Inventor: Fu-Yuan Hsieh
- Applicant: Fu-Yuan Hsieh
- Applicant Address: TW New Taipei
- Assignee: Force MOS Technology Co., Ltd.
- Current Assignee: Force MOS Technology Co., Ltd.
- Current Assignee Address: TW New Taipei
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A super-junction trench MOSFET with split gate electrodes is disclosed for high voltage device by applying multiple trenched source-body contacts with narrow CDs in unit cell. Furthermore, source regions are only formed along channel regions near the gate trenches, not between adjacent trenched source-body contacts for UIS (Unclamped Inductance Switching) current enhancement.
Public/Granted literature
- US20120187477A1 SUPER-JUNCTION TRENCH MOSFET WITH MULTIPLE TRENCHED SOURCE-BODY CONTACTS Public/Granted day:2012-07-26
Information query
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