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US08648424B2 Semiconductor device including transistors having embedded source/drain regions each including upper and lower main layers comprising germanium 有权
半导体器件包括具有嵌入的源/漏区的晶体管，每个晶体管包括包含锗的上和下主层

Semiconductor device including transistors having embedded source/drain regions each including upper and lower main layers comprising germanium
摘要：
A semiconductor device includes a substrate having a channel region, a gate insulation layer on the channel region, a gate electrode on the gate insulation layer, and source and drain regions in recesses in the substrate on both sides of the channel region, respectively. The source and drain regions include a lower main layer whose bottom surface is located at level above the bottom of a recess and lower than that of the bottom surface of the gate insulation layer, and a top surface no higher than the level of the bottom surface of the gate insulation layer, and an upper main layer contacting the lower main layer and whose top surface extends to a level higher than that of the bottom surface of the gate insulation layer, and in which the lower layer has a Ge content higher than that of the upper layer.
摘要（中）：

半导体器件包括具有沟道区的衬底，沟道区上的栅极绝缘层，栅极绝缘层上的栅电极，以及沟道区两侧的衬底中的凹槽中的源极和漏极区。 源极和漏极区域包括下表面位于凹槽底部的平面以上并且低于栅极绝缘层的底表面的下主层，以及不高于底表面的高度的顶表面 的栅极绝缘层的上部主层和与下部主层接触的上部主层，其上表面延伸到比栅极绝缘层的底面高的水平，并且其中下层的Ge含量高于栅极绝缘层的底面。 的上层。

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