Invention Grant
- Patent Title: Nitride based semiconductor package and method of manufacturing the same and bonding substrate
- Patent Title (中): 氮化物基半导体封装及其制造方法和接合基板
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Application No.: US13605112Application Date: 2012-09-06
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Publication No.: US08648459B2Publication Date: 2014-02-11
- Inventor: Jae Hoon Lee
- Applicant: Jae Hoon Lee
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2011-0090379 20110906
- Main IPC: H01L23/04
- IPC: H01L23/04 ; H01L21/28

Abstract:
A nitride based semiconductor package includes a nitride based semiconductor device, a package substrate, and a bonding substrate. The semiconductor device includes, on a surface thereof, a first electrode pattern having a source electrode, a drain electrode and a gate electrode. The bonding substrate includes, on a first surface thereof, a second electrode pattern corresponding to the first electrode pattern, and at least one first groove pattern. The first groove pattern exposes the second electrode pattern. The first electrode pattern is received in the at least one first groove pattern. The second electrode pattern is bonded to the first electrode pattern received in the at least one first groove pattern. A second surface of the bonding substrate is bonded to the package substrate.
Public/Granted literature
- US20130056750A1 NITRIDE BASED SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME AND BONDING SUBSTRATE Public/Granted day:2013-03-07
Information query
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