发明授权
- 专利标题: Manufacturing apparatus of polycrystalline silicon
- 专利标题(中): 多晶硅制造装置
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申请号: US12555085申请日: 2009-09-08
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公开(公告)号: US08652256B2公开(公告)日: 2014-02-18
- 发明人: Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
- 申请人: Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Materials Corporation
- 当前专利权人: Mitsubishi Materials Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Edwards Wildman Palmer LLP
- 优先权: JP2008-231163 20080909
- 主分类号: C30B25/00
- IPC分类号: C30B25/00
摘要:
A manufacturing apparatus of polycrystalline silicon products polycrystalline silicon by depositing on a surface of a silicon seed rod by supplying raw-material gas to the heated silicon seed rod provided vertically in a reactor, includes: an electrode which holds the silicon seed rod and is made of carbon; an electrode holder which holds the electrode, and cooled by coolant medium flowing therein, wherein the electrode includes: a seed rod holding member which holds the silicon seed rod; a heat cap which is provided between the seed rod holding member and the electrode holder; and a cap protector having a ring-like plate shape, which covers an upper surface of the heat cap, and in which a through hole penetrating the lower-end portion of the seed rod holding member is formed.
公开/授权文献
- US20100058988A1 MANUFACTURING APPARATUS OF POLYCRYSTALLINE SILICON 公开/授权日:2010-03-11
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