Sensor device and method

Invention Grant

US08652866B2 Sensor device and method 有权

Title translation: 传感器装置及方法

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Patent Title: Sensor device and method
Patent Title (中): 传感器装置及方法
Application No.: US13733375

Application Date: 2013-01-03
Publication No.: US08652866B2

Publication Date: 2014-02-18
Inventor: Klaus Elian , Georg Meyer-Berg , Horst Theuss
Applicant: Infineon Technologies AG
Applicant Address: DE Neubiberg
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Neubiberg
Agency: Dicke, Billig & Czaja, PLLC
Main IPC: H01L21/56
IPC: H01L21/56 ; H01L23/28

Abstract:

A sensor device and method. One embodiment provides a first semiconductor chip having a sensing region. A porous structure element is attached to the first semiconductor chip. A first region of the porous structure element faces the sensing region of the first semiconductor chip. An encapsulation material partially encapsulates the first semiconductor chip and the porous structure element.

Abstract(Chinese):

传感器装置及方法。一个实施例提供了具有感测区域的第一半导体芯片。多孔结构元件附接到第一半导体芯片。多孔结构元件的第一区域面向第一半导体芯片的感测区域。封装材料部分地封装第一半导体芯片和多孔结构元件。

Public/Granted literature

US20130122660A1 SENSOR DEVICE AND METHOD Public/Granted day:2013-05-16

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/50	...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的
H01L21/56	....封装，例如密封层、涂层