发明授权
- 专利标题： Nonvolatile semiconductor memory device
- 专利标题（中）： 非易失性半导体存储器件
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申请号： US13003644申请日： 2009-07-01
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公开(公告)号： US08653577B2公开(公告)日： 2014-02-18
- 发明人: Yoshiaki Fukuzumi , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Masaru Kito , Hideaki Aochi , Ryota Katsumata , Masaru Kidoh
- 申请人： Yoshiaki Fukuzumi , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Masaru Kito , Hideaki Aochi , Ryota Katsumata , Masaru Kidoh
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-181084 20080711
- 国际申请： PCT/JP2009/003057 WO 20090701
- 国际公布： WO2010/004706 WO 20100114
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L29/792
摘要：
A nonvolatile semiconductor memory device includes: a stacked body in which insulating films and electrode films are alternately stacked; selection gate electrodes provided on the stacked body; bit lines provided on the selection gate electrodes; semiconductor pillars; connective members separated from one another; and a charge storage layer provided between the electrode film and the semiconductor pillar. One of the connective members is connected between a lower part of one of the semiconductor pillars and a lower part of another of the semiconductor pillars. The one of the semiconductor pillars passes through one of the selection gate electrodes and is connected to one of the bit lines, and the another of the semiconductor pillars passes through another of the selection gate electrodes and is connected to another of the bit lines.
公开/授权文献
- US20110127597A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2011-06-02
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