发明授权
- 专利标题: Exposing method and method of manufacturing semiconductor device
- 专利标题(中): 揭示半导体器件制造方法和方法
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申请号: US12952835申请日: 2010-11-23
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公开(公告)号: US08654313B2公开(公告)日: 2014-02-18
- 发明人: Masanori Takahashi , Takashi Sato , Satoshi Tanaka , Soichi Inoue , Takamasa Takaki
- 申请人: Masanori Takahashi , Takashi Sato , Satoshi Tanaka , Soichi Inoue , Takamasa Takaki
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2009-268570 20091126
- 主分类号: G03B27/32
- IPC分类号: G03B27/32 ; G03B27/54 ; G03B27/72 ; G03B27/52
摘要:
According to one embodiment, on a substrate, a resist layer is laminated on an upper side of a pattern formation layer on which a desired pattern is formed. A diffraction pattern that diffracts exposure light irradiated on the substrate is formed further on the upper side than the resist layer. Overall exposure is performed from above the diffraction pattern using a deformed light having illumination light source shape determined according to the desired pattern. Diffracted light diffracted on the diffraction pattern by the exposure is irradiated on the resist layer.
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