Invention Grant
- Patent Title: Patterning process and photoresist with a photodegradable base
- Patent Title (中): 图案化工艺和光致抗蚀剂,具有可光降解基材
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Application No.: US13534961Application Date: 2012-06-27
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Publication No.: US08658344B2Publication Date: 2014-02-25
- Inventor: Chien-Wei Wang , Ching-Yu Chang , Tsai-Sheng Gau , Burn Jeng Lin
- Applicant: Chien-Wei Wang , Ching-Yu Chang , Tsai-Sheng Gau , Burn Jeng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/004 ; G03F7/029 ; G03F7/20 ; G03F7/32

Abstract:
A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer.
Public/Granted literature
- US20120264057A1 PATTERNING PROCESS AND PHOTORESIST WITH A PHOTODEGRADABLE BASE Public/Granted day:2012-10-18
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