发明授权
US08658439B2 Quantum dot phosphor for light emitting diode and method of preparing the same
有权
用于发光二极管的量子点荧光粉及其制备方法
- 专利标题: Quantum dot phosphor for light emitting diode and method of preparing the same
- 专利标题(中): 用于发光二极管的量子点荧光粉及其制备方法
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申请号: US12939613申请日: 2010-11-04
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公开(公告)号: US08658439B2公开(公告)日: 2014-02-25
- 发明人: Eun Joo Jang , Mi Yang Kim , Hyung Kun Kim , Shin Ae Jun , Yong Wan Jin , Seong Jae Choi
- 申请人: Eun Joo Jang , Mi Yang Kim , Hyung Kun Kim , Shin Ae Jun , Yong Wan Jin , Seong Jae Choi
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Cantor Colburn LLP
- 优先权: KR1020050005445 20050120
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.
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