Invention Grant
US08658439B2 Quantum dot phosphor for light emitting diode and method of preparing the same
有权
用于发光二极管的量子点荧光粉及其制备方法
- Patent Title: Quantum dot phosphor for light emitting diode and method of preparing the same
- Patent Title (中): 用于发光二极管的量子点荧光粉及其制备方法
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Application No.: US12939613Application Date: 2010-11-04
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Publication No.: US08658439B2Publication Date: 2014-02-25
- Inventor: Eun Joo Jang , Mi Yang Kim , Hyung Kun Kim , Shin Ae Jun , Yong Wan Jin , Seong Jae Choi
- Applicant: Eun Joo Jang , Mi Yang Kim , Hyung Kun Kim , Shin Ae Jun , Yong Wan Jin , Seong Jae Choi
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR1020050005445 20050120
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.
Public/Granted literature
- US20110121260A1 QUANTUM DOT PHOSPHOR FOR LIGHT EMITTING DIODE AND METHOD OF PREPARING THE SAME Public/Granted day:2011-05-26
Information query
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