Invention Grant
- Patent Title: Crystal growth method and semiconductor light emitting device
- Patent Title (中): 晶体生长方法和半导体发光器件
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Application No.: US12875560Application Date: 2010-09-03
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Publication No.: US08658450B2Publication Date: 2014-02-25
- Inventor: Hajime Nago , Koichi Tachibana , Toshiki Hikosaka , Shinya Nunoue
- Applicant: Hajime Nago , Koichi Tachibana , Toshiki Hikosaka , Shinya Nunoue
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-039174 20100224
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/20
Abstract:
According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes GaxAl1-xN (0.1≦x
Public/Granted literature
- US20110204411A1 CRYSTAL GROWTH METHOD AND SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2011-08-25
Information query
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