Invention Grant
- Patent Title: Stacked body-contacted field effect transistor
- Patent Title (中): 堆叠体接触场效应晶体管
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Application No.: US13860209Application Date: 2013-04-10
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Publication No.: US08658475B1Publication Date: 2014-02-25
- Inventor: Daniel Charles Kerr
- Applicant: RF Micro Devices, Inc.
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L27/10
- IPC: H01L27/10 ; H01L29/00
Abstract:
The present disclosure relates to a stacked body-contacted field effect transistor (FET) that includes multiple body-contacted FETs coupled in series and a lateral isolation band encircling a periphery of the multiple FETs. The multiple FETs include a first end FET having a first body, which is not directly connected to any body of any other of the multiple FETs, and a second end FET having a second body, which is not directly connected to any body of any other of the multiple FETs. The multiple FETs may include inner FETs that incorporate merged source-drains to save space. By keeping the bodies electrically separated from one another, the full benefits of body-contacting may be realized. However, by incorporating multiple FETs within a single lateral isolation band further saves space.
Information query
IPC分类:
