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    Antenna tuning circuitry with reduced interference
    1.
    发明授权
    Antenna tuning circuitry with reduced interference 有权

    公开(公告)号：US09865922B2

    公开(公告)日：2018-01-09

    申请号：US14465142

    申请日：2014-08-21

    Applicant: RF Micro Devices, Inc.

    Inventor： Daniel Charles Kerr ,  Christian Rye Iversen ,  Eric K. Bolton ,  Ruediger Bauder ,  Nadim Khlat

    IPC: H01Q5/328 ,  H01Q5/335

    CPC classification number: H01Q5/328 ,  H01Q5/335

    Abstract: Antenna tuning circuitry includes an antenna tuning node, an antenna tuning switch, and a resonant tuning circuit. The antenna tuning node is coupled to a resonant conduction element of an antenna. The antenna tuning switch and the resonant tuning circuit are coupled in series between the antenna tuning switch and the antenna tuning node, such that the resonant tuning circuit is between the antenna tuning node and the antenna tuning switch. The resonant tuning circuit is configured to resonate at one or more harmonic frequencies generated by the antenna tuning switch such that a high impedance path is formed between the antenna tuning switch and the antenna tuning node at harmonic frequencies generated by the antenna tuning switch. Accordingly, harmonic interference generated by the antenna tuning switch is prevented from reaching the antenna, while simultaneously allowing for tuning of the antenna.

    DEDICATED SHUNT SWITCH WITH IMPROVED GROUND
    2.
    发明申请
    DEDICATED SHUNT SWITCH WITH IMPROVED GROUND 有权
    专用分路开关改进

    公开(公告)号：US20140220911A1

    公开(公告)日：2014-08-07

    申请号：US14171994

    申请日：2014-02-04

    Applicant: RF Micro Devices, Inc.

    Inventor： Jeppe Korshøj Bendixen ,  Daniel Charles Kerr ,  Christian Rye Iversen

    IPC: H01Q1/50 ,  H04B1/44

    CPC classification number: H04B1/44 ,  H01Q1/242

    Abstract: Antenna tuning switch circuitry includes an input port, a shunt switch, control circuitry, and an integrated ground. The shunt switch is coupled between the input port and the integrated ground. The control circuitry includes a control signal input port, a switch driver output port coupled to the shunt switch, and a ground connection port coupled to the integrated ground. The shunt switches, the RF input ports, the control circuitry, and the integrated ground are monolithically integrated on a single semiconductor die. The antenna tuning switch circuitry is adapted to selectively couple the input port to the integrated ground in order to alter one or more operating parameters of an attached antenna. By monolithically integrating the shunt switch together with the control circuitry and the integrated ground, the ON state impedance and the parasitic OFF state impedance of the antenna tuning switch circuitry can be significantly improved.

    Abstract translation: 天线调谐开关电路包括输入端口，分流开关，控制电路和集成接地。 分流开关耦合在输入端口和集成接地之间。 控制电路包括控制信号输入端口，耦合到并联开关的开关驱动器输出端口以及耦合到集成接地的接地连接端口。 分流开关，RF输入端口，控制电路和集成接地单个集成在单个半导体管芯上。 天线调谐开关电路适于选择性地将输入端口耦合到集成地，以便改变连接的天线的一个或多个操作参数。 通过将分流开关与控制电路和集成接地单片集成，可以显着地改善天线调谐开关电路的导通状态阻抗和寄生OFF状态阻抗。

    SEMICONDUCTOR RADIO FREQUENCY SWITCH WITH BODY CONTACT
    4.
    发明申请
    SEMICONDUCTOR RADIO FREQUENCY SWITCH WITH BODY CONTACT 审中-公开
    半导体无线电频率开关与身体接触

    公开(公告)号：US20140242760A1

    公开(公告)日：2014-08-28

    申请号：US14276370

    申请日：2014-05-13

    Applicant: RF Micro Devices, Inc.

    Inventor： Michael Carroll ,  Daniel Charles Kerr ,  Christian Rye Iversen ,  Philip W. Mason ,  Julio Costa ,  Edward T. Spears

    IPC: H01L21/84

    CPC classification number: H01L21/84 ,  H01L21/743 ,  H01L27/1203 ,  H01L29/4238 ,  H01L29/7833

    Abstract: The present disclosure relates to a radio frequency (RF) switch that includes multiple body-contacted field effect transistor (FET) elements coupled in series. The FET elements may be formed using a thin-film semiconductor device layer, which is part of a thin-film semiconductor die. Conduction paths between the FET elements through the thin-film semiconductor device layer and through a substrate of the thin-film semiconductor die may be substantially eliminated by using insulating materials. Elimination of the conduction paths allows an RF signal across the RF switch to be divided across the series coupled FET elements, such that each FET element is subjected to only a portion of the RF signal. Further, each FET element is body-contacted and may receive reverse body biasing when the RF switch is in an OFF state, thereby reducing an OFF state drain-to-source capacitance of each FET element.

    Abstract translation: 本发明涉及射频（RF）开关，其包括串联耦合的多个体接触场效应晶体管（FET）元件。 可以使用作为薄膜半导体管芯的一部分的薄膜半导体器件层来形成FET元件。 通过薄膜半导体器件层和通过薄膜半导体晶片的衬底的FET元件之间的导通路径可以通过使用绝缘材料基本上消除。 消除导通路径允许跨越RF开关的RF信号在串联耦合的FET元件之间被划分，使得每个FET元件仅受到RF信号的一部分的影响。 此外，当RF开关处于OFF状态时，每个FET元件被体接触并且可以接收反向主体偏置，从而降低每个FET元件的截止状态漏极 - 源极电容。

    Dedicated shunt switch with improved ground
    5.
    发明授权
    Dedicated shunt switch with improved ground 有权
    专用分流开关，具有改进的接地

    公开(公告)号：US09559745B2

    公开(公告)日：2017-01-31

    申请号：US14171994

    申请日：2014-02-04

    Applicant: RF Micro Devices, Inc.

    Inventor： Jeppe Korshøj Bendixen ,  Daniel Charles Kerr ,  Christian Rye Iversen

    IPC: H04B1/44 ,  H01Q1/24

    CPC classification number: H04B1/44 ,  H01Q1/242

    Abstract: Antenna tuning switch circuitry includes an input port, a shunt switch, control circuitry, and an integrated ground. The shunt switch is coupled between the input port and the integrated ground. The control circuitry includes a control signal input port, a switch driver output port coupled to the shunt switch, and a ground connection port coupled to the integrated ground. The shunt switches, the RF input ports, the control circuitry, and the integrated ground are monolithically integrated on a single semiconductor die. The antenna tuning switch circuitry is adapted to selectively couple the input port to the integrated ground in order to alter one or more operating parameters of an attached antenna. By monolithically integrating the shunt switch together with the control circuitry and the integrated ground, the ON state impedance and the parasitic OFF state impedance of the antenna tuning switch circuitry can be significantly improved.

    Abstract translation: 天线调谐开关电路包括输入端口，分流开关，控制电路和集成接地。 分流开关耦合在输入端口和集成接地之间。 控制电路包括控制信号输入端口，耦合到并联开关的开关驱动器输出端口以及耦合到集成接地的接地连接端口。 分流开关，RF输入端口，控制电路和集成接地单个集成在单个半导体管芯上。 天线调谐开关电路适于选择性地将输入端口耦合到集成地，以便改变连接的天线的一个或多个操作参数。 通过将分流开关与控制电路和集成接地单片集成，可以显着地改善天线调谐开关电路的导通状态阻抗和寄生OFF状态阻抗。

    Technique to reduce the third harmonic of an on-state RF switch
    6.
    发明授权
    Technique to reduce the third harmonic of an on-state RF switch 有权
    降低导通状态RF开关三次谐波的技术

    公开(公告)号：US09236957B2

    公开(公告)日：2016-01-12

    申请号：US14271921

    申请日：2014-05-07

    Applicant: RF Micro Devices, Inc.

    Inventor： Eric K. Bolton ,  Daniel Charles Kerr ,  Marcus Granger-Jones

    IPC: H04B1/44 ,  H04B15/02

    CPC classification number: H04B15/02

    Abstract: RF switching circuitry includes an RF switch coupled between an input node and an output node. Distortion compensation circuitry is coupled in parallel with the RF switch between the input node and the output node. The RF switch is configured to selectively pass an RF signal from the input node to the output node based on a first switching control signal. The distortion compensation circuitry is configured to boost a portion of the RF signal that is being compressed by the RF switch when the amplitude of the RF signal is above a predetermined threshold by selectively injecting current into one of the input node or the output node. Boosting a portion of the RF signal that is being compressed by the RF switch allows a signal passing through the RF switch to remain substantially linear, thereby improving the performance of the RF switching circuitry.

    Abstract translation: RF切换电路包括耦合在输入节点和输出节点之间的RF开关。 失真补偿电路与输入节点和输出节点之间的RF开关并联耦合。 RF开关被配置为基于第一开关控制信号选择性地将RF信号从输入节点传递到输出节点。 失真补偿电路被配置为通过选择性地将电流注入到输入节点或输出节点之一时，通过RF信号的幅度高于预定阈值来升高被RF开关压缩的RF信号的一部分。 升高由RF开关压缩的RF信号的一部分允许通过RF开关的信号保持基本上线性，从而提高RF开关电路的性能。

    Patterned silicon-on-plastic (SOP) technology and methods of manufacturing the same
    7.
    发明授权
    Patterned silicon-on-plastic (SOP) technology and methods of manufacturing the same 有权
    图案化硅胶（SOP）技术及其制造方法

    公开(公告)号：US09214337B2

    公开(公告)日：2015-12-15

    申请号：US14261029

    申请日：2014-04-24

    Applicant: RF Micro Devices, Inc.

    Inventor： Michael Carroll ,  Julio Costa ,  Daniel Charles Kerr ,  Don Willis ,  Elizabeth Glass

    IPC: H01L29/02 ,  H01L21/02 ,  H01L23/29 ,  H01L23/36 ,  H01L23/373 ,  H01L21/683 ,  H01L29/786 ,  H01L29/06 ,  H01L23/31 ,  H01L21/56

    CPC classification number: H01L21/0237 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/3737 ,  H01L23/485 ,  H01L29/0657 ,  H01L29/78606 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/13

    Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive.

    Abstract translation: 公开了一种半导体器件及其制造方法。 半导体器件包括附接到晶片把手的半导体堆叠结构，其具有至少一个孔，其延伸穿过晶片把手到达半导体堆叠结构的暴露部分。 导热和电阻聚合物基本上填充至少一个孔并接触半导体堆叠结构的暴露部分。 用于制造半导体器件的一种方法包括在晶片手柄中形成图案化孔以暴露半导体堆叠结构的一部分。 图案化的孔可以或可以不与构成半导体堆叠结构的RF电路的部分对准。 接下来的步骤包括使半导体堆叠结构的暴露部分与聚合物接触，并且用聚合物基本上填充图案化的孔，其中聚合物是导热的并具有电阻性。

    Patterned silicon-on-plastic (SOP) technology and methods of manufacturing the same
    8.
    发明授权
    Patterned silicon-on-plastic (SOP) technology and methods of manufacturing the same 有权

    公开(公告)号：US09184049B2

    公开(公告)日：2015-11-10

    申请号：US14261029

    申请日：2014-04-24

    Applicant: RF Micro Devices, Inc.

    Inventor： Michael Carroll ,  Julio Costa ,  Daniel Charles Kerr ,  Don Willis ,  Elizabeth Glass

    IPC: H01L29/02 ,  H01L21/02 ,  H01L23/29 ,  H01L23/36 ,  H01L23/373 ,  H01L21/683 ,  H01L29/786 ,  H01L29/06 ,  H01L23/31 ,  H01L21/56

    Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive.

    HARMONIC CANCELLATION CIRCUIT FOR AN RF SWITCH BRANCH
    10.
    发明申请
    HARMONIC CANCELLATION CIRCUIT FOR AN RF SWITCH BRANCH 有权
    用于RF开关分支的谐波消除电路

    公开(公告)号：US20140266415A1

    公开(公告)日：2014-09-18

    申请号：US14212831

    申请日：2014-03-14

    Applicant: RF Micro Devices, Inc.

    Inventor： Daniel Charles Kerr ,  Eric K. Bolton ,  Robert Andrew Phelps

    IPC: H03H11/04

    CPC classification number: H03H11/1213 ,  H01P1/15 ,  H03K17/102 ,  H03K17/687 ,  H03K17/693

    Abstract: Disclosed is a harmonic cancellation circuit for an RF switch branch having a first transistor with a first gate terminal and a first body terminal, a second transistor having a second gate terminal coupled to the first body terminal, and having a second body terminal coupled to the first gate terminal. Also included is a first resistor coupled between a first coupling node and the second body terminal, and a second resistor coupled between a second coupling node and the first body terminal, wherein the first transistor and second transistor are adapted to generate an inverse phase third harmonic signal relative to a third harmonic signal generated by the RF switch branch, such that the inverse phase third harmonic signal is output through the first resistor and the second resistor to the RF switch branch to reduce the third harmonic signal.

    Abstract translation: 公开了一种用于RF开关分支的谐波消除电路，具有具有第一栅极端子和第一主体端子的第一晶体管，第二晶体管具有耦合到第一主体端子的第二栅极端子，并且具有耦合到第一主体端子的第二主体端子 第一门终端。 还包括耦合在第一耦合节点和第二主体端子之间的第一电阻器和耦合在第二耦合节点和第一主体端子之间的第二电阻器，其中第一晶体管和第二晶体管适于产生反相三次谐波 信号相对于由RF开关分支产生的三次谐波信号，使得反相三次谐波信号通过第一电阻器和第二电阻器输出到RF开关分支以减少三次谐波信号。

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