Invention Grant
- Patent Title: Method of fabricating an epitaxial Ni silicide film
- Patent Title (中): 制造外延Ni硅化物膜的方法
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Application No.: US13612240Application Date: 2012-09-12
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Publication No.: US08658530B2Publication Date: 2014-02-25
- Inventor: Marwan H. Khater , Christian Lavoie , Bin Yang , Zhen Zhang
- Applicant: Marwan H. Khater , Christian Lavoie , Bin Yang , Zhen Zhang
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: International Business Machines Corporation,GlobalFoundries Inc.
- Current Assignee: International Business Machines Corporation,GlobalFoundries Inc.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Agent Louis J. Percello, Esq.
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/477 ; H01L21/36
Abstract:
An epitaxial Ni silicide film that is substantially non-agglomerated at high temperatures, and a method for forming the epitaxial Ni silicide film, is provided. The Ni silicide film of the present disclosure is especially useful in the formation of ETSOI (extremely thin silicon-on-insulator) Schottky junction source/drain FETs. The resulting epitaxial Ni silicide film exhibits improved thermal stability and does not agglomerate at high temperatures.
Public/Granted literature
- US20130012020A1 USE OF EPITAXIAL NI SILICIDE Public/Granted day:2013-01-10
Information query
IPC分类:
