Invention Grant
- Patent Title: Laser annealing apparatus
- Patent Title (中): 激光退火装置
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Application No.: US12457692Application Date: 2009-06-18
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Publication No.: US08658939B2Publication Date: 2014-02-25
- Inventor: Sung-Won Chung
- Applicant: Sung-Won Chung
- Applicant Address: KR Giheung-Gu, Yongin, Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Giheung-Gu, Yongin, Gyeonggi-Do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2008-0057484 20080618
- Main IPC: B23K26/00
- IPC: B23K26/00 ; B23K26/02

Abstract:
A laser annealing apparatus used in a crystallization process of an amorphous silicon thin film. The laser annealing apparatus includes a laser beam generation unit generating a laser beam, an optical system dividing the laser beam into a plurality of linear laser beams and including a focusing lens focusing the linear laser beams and projecting the focused linear laser beam on a substrate to be processed, and a focusing lens adjustment device adjusting a perpendicular distance and a rotation angle of the focusing lens relative to the substrate.
Public/Granted literature
- US20090314755A1 Laser annealing apparatus Public/Granted day:2009-12-24
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