发明授权
US08659002B2 Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using same
有权
使用能量转换层，存储器阵列和包括其的系统的相变存储器元件，以及制造和使用它们的方法
- 专利标题： Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using same
- 专利标题（中）： 使用能量转换层，存储器阵列和包括其的系统的相变存储器元件，以及制造和使用它们的方法
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申请号： US13553225申请日： 2012-07-19
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公开(公告)号： US08659002B2公开(公告)日： 2014-02-25
- 发明人: Jun Liu , Mike Violette , Jon Daley
- 申请人： Jun Liu , Mike Violette , Jon Daley
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dickstein Shapiro LLP
- 主分类号： H01L47/00
- IPC分类号： H01L47/00
摘要：
A phase change memory element and method of forming the same. The memory element includes a phase change material layer electrically coupled to first and second conductive material layers. A energy conversion layer is formed in association with the phase change material layer, and electrically coupled to a third conductive material layer. An electrically isolating material layer is formed between the phase change material layer and the energy conversion layer.
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